?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet july 2012 unifet tm fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet features ? 16a, 500v, r ds(on) = 0.38 @v gs = 10 v ? low gate charge ( typical 32 nc) ?low c rss ( typical 20 pf) ?fast switching ? 100% avalanche tested ? improved dv/dt capability description these n-channel enhancement mode power field effect transistors are produced using fairchild?s proprietary, planar stripe, dmos technology. this advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. these devices are well suited for high efficient switched mode power supplies and active power factor correction. to-220 fdp series g s d to-220f fdpf series g s d d g s absolute maximum ratings symbol parameter fdp16n50 fdpf16n50 / fdpf16 n50t unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 c) - continuous (t c = 100 c) 16 9.6 16 * 9.6 * a a i dm drain current - pulsed (note 1) 64 64 * a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 780 mj i ar avalanche current (note 1) 16 a e ar repetitive avalanche energy (note 1) 20 mj dv/dt peak diode recovery dv/dt (note 3) 4.5 v/ns p d power dissipation (t c = 25 c) - derate above 25 c 200 1.59 38.5 0.3 w w/ c t j, t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 c thermal characteristics symbol parameter fdp16n50 fdpf16n50 / f dpf16n50t unit r jc thermal resistance, junction-to-case 0.63 3.3 c/w r cs thermal resistance, case-to-sink typ. 0.5 -- c/w r ja thermal resistance, junction-to-ambient 62.5 62.5 c/w * drain current limited by maximum junction temperature
2 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet package marking and ordering information device marking device package reel size tape width quantity fdpf16n50 fdpf16n50 to-220f - - 50 fdpf16n50t fdpf16n50t to-220f - - 50 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min. typ. max units off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 a 500 -- -- v bv dss / t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25 c -- 0.5 -- v/ c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 c -- -- -- -- 1 10 a a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 8a -- 0.31 0.38 g fs forward transconductance v ds = 40v, i d = 8a (note 4) -- 23 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 1495 1945 pf c oss output capacitance -- 235 310 pf c rss reverse transfer capacitance -- 20 30 pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 16a r g = 25 (note 4, 5) -- 40 90 ns t r turn-on rise time -- 150 310 ns t d(off) turn-off delay time -- 65 140 ns t f turn-off fall time -- 80 170 ns q g total gate charge v ds = 400v, i d = 16a v gs = 10v (note 4, 5) -- 32 45 nc q gs gate-source charge -- 8.5 -- nc q gd gate-drain charge -- 14 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 9.2 a i sm maximum pulsed drain-source diode forward current -- -- 37 a v sd drain-source diode forward voltage v gs = 0v, i s = 16a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 16a di f /dt =100a/ s (note 4) -- 490 -- ns q rr reverse recovery charge -- 5.0 -- c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. l = 5.5mh, i as = 16a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 16a, di/dt 200a/ s, v dd bv dss , starting t j = 25 c 4. pulse test: pulse width 30 0 s, duty cycle 2% 5. essentially independent of operating temperature typical characteristics
3 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariation vs. s ource current and temperatue figure 5. capacitance characteristics figure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 10 2 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 p s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681012 10 0 10 1 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 p s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0 5 10 15 20 25 30 35 40 0.2 0.3 0.4 0.5 0.6 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ : ], drain-source on-resistance i d , drain current [a] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 10 0 10 1 150 o c * notes : 1. v gs = 0v 2. 250 p s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 10 -1 10 0 10 1 0 1000 2000 3000 4000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v] 0 10203040 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 16a v gs , gate-source voltage [v] q g , total gate charge [nc]
4 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9-1. maximum safe operating area figure 9-2. maximum safe operating area - fdp16n50 - fdpf16n50 / fdpf16n50t figure 10. maximum drain currentvs. case temperature -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 8 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 p a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 p s dc 10 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 10 0 10 1 10 2 10 -2 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 p s dc 10 ms 100 p s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 5 10 15 20 i d , drain current [a] t c , case temperature [ o c]
5 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet typical performance characteristics (continued) figure 11-1 . transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1. z jc (t) = 0.63 o c/w max. 2 . d u ty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2 - fdp16n50 figure 11-2. tran s ient thermal response curve - fdpf16n50 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1. z jc (t) = 3.3 o c/w max. 2 . d u ty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , s quare w ave p ulse d uration [sec] t 1 p dm t 2 / fdpf16n50t
6 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
7 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet peak diode recovery dv/dt test circuit & waveforms
8 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet mechanical dimensions to-220f (7.00) (0.70) max1.47 (30 ) #1 3.30 0.10 15.80 0.20 15.87 0.20 6.68 0.20 9.75 0.30 4.70 0.20 10.16 0.20 (1.00x45 ) 2.54 0.20 0.80 0.10 9.40 0.20 2.76 0.20 0.35 0.10 ?.18 0.10 2.54typ [2.54 0.20 ] 2.54typ [2.54 0.20 ] 0.50 +0.10 ?.05 dimensions in millimeters
9 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16n50t 500v n-channel mosfet package dimensions dimensions in millimeters to-220f potted * front/back side isolation voltage : ac 2500v
10 www.fairchildsemi.com fdp16n50 / fdpf16n50 / fdpf16n50t rev. c1 fdp16n50 / fdpf16n50 / fdpf16 n50t 500v n-channel mosfet trademarks the following includes registered and unregistered trademarks and se rvice marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes wi thout further notice to any products herein to improve reliability, function, or design. fairchild does not assume any li ability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s worldwid e terms and conditions, specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized for use as critical components in life support devices or systems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems ar e devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life sup port device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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* p serdes? uhc ? ultra frfet? unifet? vcx? visualmax? voltageplus? xs? ? ? tm datasheet identification product status definition advance information formative / in design datasheet contains the design specifications for product development. specifications may change in any manner without notice. preliminary first production datasheet contains preliminary data; supplementary data will be published at a later date. fairchild semiconductor reserves the right to make changes at any time without notice to improve design. no identification needed full production datasheet contains final specifications. fair child semiconductor reserves the right to make changes at any time without notice to improve the design. obsolete not in production datasheet contains specifications on a product that is discontinued by fairchild semiconductor. the datasheet is for reference information only. anti-counterfeiting policy fairchild semiconductor corporation?s anti-counterfeiting policy. fairchild?s anti-counterfeiting policy is also stated on our external website, www.fairchildsemi.com, under sales support . counterfeiting of semiconductor parts is a growing problem in th e industry. all manufactures of semiconductor products are expe riencing counterfeiting of their parts. customers who inadvertently purchase counterfeit parts exper ience many problems such as loss of brand reputation, substa ndard performance, failed application, and increased cost of production and manufacturing delays. fairchild is taking strong measures to protect ourselve s and our customers from the proliferation of counterfeit parts. fairchild strongly encourages customers to purchase fairchild parts either directly from fa irchild or from authorized fairchild distributors who are listed by country on our web page cited above . products customers buy either from fairchild directly or fr om authorized fairchild distributors are genuine parts, have full traceability, meet fairchild?s quality standards for handing and storage and provide access to fairchild?s full range of up-to-date technical and product information. fairchild and our authorized distributors will stand behind all warranties and wi ll appropriately address and warranty issues that may arise. fairchild will not provide any warranty coverage or other assistance for parts bought from unau thorized sources. fairchild is committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors. rev. i61 tm ?
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